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The present invention relates to a method for producing a capacitor having a dielectric film.
2. Related Art
In semiconductor devices, it is necessary to form an insulation film on the surface of a semiconductor substrate. A capacitor is formed by use of the insulation film. For the insulation film, a silicon oxide film is formed, for example.
A method for producing a capacitor is known which includes the steps of: forming an insulation film on a semiconductor substrate; forming a plurality of electrodes on the insulation film; and forming a dielectric film between the electrodes (see JP-A-2007-159084). According to the method, it is possible to simplify a process for producing a capacitor because a plurality of electrodes are formed at the same time.
A capacitor used for a semiconductor device is required to have a capacitance of about 1 pF to about 10 pF. On the other hand, in order to obtain a capacitance of about 1 pF to about 10 pF, it is necessary to produce a capacitor having a dielectric film of about 100 nm
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